Transient simulation of silicon devices and circuits
The work
| Authors | Randolph E. Bank; W.M. Coughran; Wolfgang Fichtner; E.H. Grosse; Donald J. Rose; Randall K. Smith |
|---|---|
| Editors | |
| Type | article |
| Year | 1985 |
| Citekey | bank1985transient |
Where it appeared
| Published in | IEEE Transactions on Electron Devices |
|---|---|
| Publisher | Institute of Electrical and Electronics Engineers |
| Volume | 32 |
| Issue | 10 |
| Pages | 1992--2007 |
Identifiers
| DOI | 10.1109/t-ed.1985.22232 |
|---|---|
| OpenAlex | W2038819033 |
Access
| Landing page | https://doi.org/10.1109/t-ed.1985.22232 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
In this paper, we present an overview of the physical principles and numerical methods used to solve the coupled system of non-linear partial differential equations that model the transient behavior of silicon VLSI device structures. We also describe how the same techniques are applicable to circuit simulation. A composite linear multistep formula is introduced as the time-integration scheme. Newton-iterative methods are exploited to solve the nonlinear equations that arise at each time step. We also present a simple data structure for nonsymmetric matrices with symmetric nonzero structures that facilitates iterative or direct methods with substantial efficiency gains over other storage schemes. Several computational examples, including a CMOS latchup problem, are presented and discussed.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-26 17:11 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@article{bank1985transient,
title = {Transient simulation of silicon devices and circuits},
author = {Randolph E. Bank and W.M. Coughran and Wolfgang Fichtner and E.H. Grosse and Donald J. Rose and Randall K. Smith},
year = {1985},
journal = {IEEE Transactions on Electron Devices},
publisher = {Institute of Electrical and Electronics Engineers},
volume = {32},
number = {10},
pages = {1992--2007},
doi = {10.1109/t-ed.1985.22232},
}
This record lives at https://refs.drheap.org/bank1985transient/ and will keep doing so.