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X ray nanoprobe for fault attacks and circuit edits on 28-nm integrated circuits
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Abstract
Ionizing radiations pose risks to Integrated Circuits (ICs) in space devices and nuclear reactors, but their effects are mitigated by specific designs and redundancy. Besides characterizing radiation faults, X-rays can be intentionally used to modify IC behavior. This study demonstrates inducing semi-permanent faults in 28 nm technology node transistors using a 50-nm nanoprobe beam from the European Synchrotron Radiation Facility. Precise X-ray flux control enables targeted perturbation of transistors without invasive attacks, expanding applications to circuit edits and fault attacks. Cheaper and more accessible X-ray beams enable inducing similar effects, though on older technologies for the moment.
@misc{bouat2023ray,
title = {X ray nanoprobe for fault attacks and circuit edits on 28-nm integrated circuits},
author = {Sophie Bouat and Stéphanie Anceau and L. Maingault and Jessy Clédière and Luc Salvo and Rémi Tucoulou},
year = {2023},
journal = {IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)},
pages = {1--6},
doi = {10.1109/dft59622.2023.10313553},
}