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A 32 nm Embedded, Fully-Digital, Phase-Locked Low Dropout Regulator for Fine Grained Power Management in Digital Circuits

The work

AuthorsSamantak Gangopadhyay; Dinesh Somasekhar; James W. Tschanz; Arijit Raychowdhury
Editors
Typearticle
Year2014
Citekeygangopadhyay2014embedded

Where it appeared

Published inIEEE Journal of Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers
Volume49
Issue11
Pages2684--2693

Identifiers

DOI10.1109/jssc.2014.2353798
OpenAlexW2086284897

Access

Landing pagehttps://doi.org/10.1109/jssc.2014.2353798

From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.

Abstract

The need for fine-grained power management in digital ICs has led to the design and implementation of compact, scalable low-drop out regulators (LDOs) embedded deep within logic blocks. While analog LDOs have traditionally been used in digital ICs, the need for digitally implementable LDOs embedded in digital functional units for ultrafine grained power management is paramount. This paper presents a fully-digital, phase locked LDO implemented in 32 nm CMOS. The control model of the proposed design has been provided and limits of stability have been shown. Measurement results with a resistive load as well as a digital load exhibit peak current efficiency of 98%.

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Added2026-10-27 19:03 UTC
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Cite it as

@article{gangopadhyay2014embedded,
  title        = {A 32 nm Embedded, Fully-Digital, Phase-Locked Low Dropout Regulator for Fine Grained Power Management in Digital Circuits},
  author       = {Samantak Gangopadhyay and Dinesh Somasekhar and James W. Tschanz and Arijit Raychowdhury},
  year         = {2014},
  journal      = {IEEE Journal of Solid-State Circuits},
  publisher    = {Institute of Electrical and Electronics Engineers},
  volume       = {49},
  number       = {11},
  pages        = {2684--2693},
  doi          = {10.1109/jssc.2014.2353798},
}

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