Overview of floating-gate devices, circuits, and systems
The work
| Authors | Paul E. Hasler; Tor Sverre Lande |
|---|---|
| Editors | |
| Type | article |
| Year | 2001 |
| Citekey | hasler2001overview |
Where it appeared
| Published in | IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing |
|---|---|
| Publisher | Institute of Electrical and Electronics Engineers |
| Volume | 48 |
| Issue | 1 |
| Pages | 1--3 |
Identifiers
| DOI | 10.1109/tcsii.2001.913180 |
|---|---|
| OpenAlex | W2077841234 |
Access
| Landing page | https://doi.org/10.1109/tcsii.2001.913180 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
THIS Special Issue of the IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II is focused on circuits using floating-gate MOS transistors. These devices are well known from EPROMs, EEPROMs, and flash memories. The primary principle is that the polysilicon gate of an MOS transistor completely wrapped in silicon dioxide maintains stored charge for a long time. Since the first report of floating-gate devices in 1967 [1], digital floating-gate circuits have developed into a mature technology present in every personal computer [2].
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-26 17:44 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@article{hasler2001overview,
title = {Overview of floating-gate devices, circuits, and systems},
author = {Paul E. Hasler and Tor Sverre Lande},
year = {2001},
journal = {IEEE Transactions on Circuits and Systems II Analog and Digital Signal Processing},
publisher = {Institute of Electrical and Electronics Engineers},
volume = {48},
number = {1},
pages = {1--3},
doi = {10.1109/tcsii.2001.913180},
}
This record lives at https://refs.drheap.org/hasler2001overview/ and will keep doing so.