A Fast \(I{-}V\) Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics
The work
| Authors | Arash Elhami Khorasani; Mark D. Griswold; T. L. Alford |
|---|---|
| Editors | |
| Type | article |
| Year | 2014 |
| Citekey | khorasani2014fast |
Where it appeared
| Published in | IEEE Electron Device Letters |
|---|---|
| Publisher | Institute of Electrical and Electronics Engineers |
| Volume | 35 |
| Issue | 1 |
| Pages | 117--119 |
Identifiers
| DOI | 10.1109/led.2013.2290538 |
|---|---|
| OpenAlex | W2038081445 |
Access
| Landing page | https://doi.org/10.1109/led.2013.2290538 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
Semiconductor manufacturing economics necessitate the development of novel and innovative techniques that can replace the traditional time consuming reliability methods, i.e., the constant voltage stress time-dependent dielectric breakdown (CVS-TDDB) tests. We show that positive charge trapping is a dominant process when ultra-thick oxides are stressed through the ramped voltage test. Exploiting the physics behind positive charge generation/trapping at high electric fields, a fast I-V measurement technique is proposed that can be used to effectively distinguish the ultra-thick oxides' intrinsic quality at low electric fields. It will be demonstrated, based on experimental data, that our proposed technique can be a suitable replacement for the CVS-TDDB as a quality screening tool.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-26 17:57 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@article{khorasani2014fast,
title = {A Fast $I{-}V$ Screening Measurement for TDDB Assessment of Ultra-Thick Inter-Metal Dielectrics},
author = {Arash Elhami Khorasani and Mark D. Griswold and T. L. Alford},
year = {2014},
journal = {IEEE Electron Device Letters},
publisher = {Institute of Electrical and Electronics Engineers},
volume = {35},
number = {1},
pages = {117--119},
doi = {10.1109/led.2013.2290538},
}
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