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Fabrication of single-crystal lithium niobate films by crystal ion slicing

The work

AuthorsM. Levy; Richard M. Osgood; R. Liu; Leslie Eric Cross; G. S. Cargill; Abhishek Kumar; H. Bakhru
Editors
Typearticle
Year1998
Citekeylevy1998fabrication

Where it appeared

Published inApplied Physics Letters
PublisherAmerican Institute of Physics
Volume73
Issue16
Pages2293--2295

Identifiers

DOI10.1063/1.121801
OpenAlexW2000432206

From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.

Abstract

We report on the implementation of crystal ion slicing in lithium niobate (LiNbO3). Deep-ion implantation is used to create a buried sacrificial layer in single-crystal c-cut poled wafers of LiNbO3, inducing a large etch selectivity between the sacrificial layer and the rest of the sample. 9-μm-thick films of excellent quality are separated from the bulk and bonded to silicon and gallium arsenide substrates. These single-crystal films have the same room-temperature dielectric and pyroelectric characteristics, and ferroelectric transition temperature as single-crystal bulk. A stronger high-temperature pyroelectric response is found in the films.

How it got here

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Added2026-10-28 03:25 UTC
Not denied bya person 2026-10-29 17:12 UTC

Cite it as

@article{levy1998fabrication,
  title        = {Fabrication of single-crystal lithium niobate films by crystal ion slicing},
  author       = {M. Levy and Richard M. Osgood and R. Liu and Leslie Eric Cross and G. S. Cargill and Abhishek Kumar and H. Bakhru},
  year         = {1998},
  journal      = {Applied Physics Letters},
  publisher    = {American Institute of Physics},
  volume       = {73},
  number       = {16},
  pages        = {2293--2295},
  doi          = {10.1063/1.121801},
}

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