J. Liaw
1 reference under this name, matched as it is written. Somebody else may write under it too, and the same person may appear here spelled another way.
A highly manufacturable 28nm CMOS low power platform technology with fully functional 64Mb SRAM using dual/tripe gate oxide process
S.-Y. Wu and others (2009) · 2009 Symposium on VLSI Technology. IEEE, june 2009.