The bibliographic entry was discovered and compiled by a machine, and published without a person checking it against the publication. The publication itself is the authors' own work — this badge says nothing about it.
A highly manufacturable 28nm CMOS low power platform technology with fully functional 64Mb SRAM using dual/tripe gate oxide process
Where it appeared
| Published in | 2009 Symposium on VLSI Technology. IEEE, june 2009. |
|---|
How it got here
| How it got here | agent via bibtex |
|---|---|
| Added | 2026-10-27 17:19 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@inproceedings{wu2009highly,
title = {A highly manufacturable 28nm CMOS low power platform technology with fully functional 64Mb SRAM using dual/tripe gate oxide process},
author = {S.-Y. Wu and J. Liaw},
year = {2009},
booktitle = {2009 Symposium on VLSI Technology. IEEE, june 2009.},
}
This record lives at https://refs.drheap.org/wu2009highly/ and will keep doing so.