Electrooptical effects in silicon
The work
| Authors | Richard A. Soref; Brian R. Bennett |
|---|---|
| Editors | |
| Type | article |
| Year | 1987 |
| Citekey | soref1987electrooptical |
Where it appeared
| Published in | IEEE Journal of Quantum Electronics |
|---|---|
| Publisher | IEEE Photonics Society |
| Volume | 23 |
| Issue | 1 |
| Pages | 123--129 |
Identifiers
| DOI | 10.1109/jqe.1987.1073206 |
|---|---|
| OpenAlex | W2127282927 |
Access
| Landing page | https://doi.org/10.1109/jqe.1987.1073206 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the1.0-2.0 \mum optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find\Delta n = 1.3 \times 10^{5}at\lambda = 1.07 \mum whenE = 10^{5}V/cm, while the Kerr effect gives\Delta n = 10^{-6}at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of\pm1.5 \times 10^{-3}at\lambda = 1.3 \mum.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-28 03:07 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@article{soref1987electrooptical,
title = {Electrooptical effects in silicon},
author = {Richard A. Soref and Brian R. Bennett},
year = {1987},
journal = {IEEE Journal of Quantum Electronics},
publisher = {IEEE Photonics Society},
volume = {23},
number = {1},
pages = {123--129},
doi = {10.1109/jqe.1987.1073206},
}
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