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Voltage acceleration and t63.2 of 1.6–10 nm gate oxides
The work
| Authors | R.-P. Vollertsen; E.Y. Wu |
|---|---|
| Editors | |
| Type | article |
| Year | 2004 |
| Citekey | vollertsen2004voltage |
Where it appeared
| Published in | Microelectronics Reliability |
|---|---|
| Publisher | Elsevier BV |
| Volume | 44 |
| Issue | 6 |
| Pages | 909--916 |
Identifiers
| DOI | 10.1016/j.microrel.2004.02.005 |
|---|---|
| ISSN | 0026-2714 |
Access
| Landing page | https://doi.org/10.1016/j.microrel.2004.02.005 |
|---|
How it got here
| How it got here | agent via crossref |
|---|---|
| Added | 2026-10-26 18:41 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@article{vollertsen2004voltage,
title = {Voltage acceleration and t63.2 of 1.6–10 nm gate oxides},
author = {R.-P. Vollertsen and E.Y. Wu},
year = {2004},
journal = {Microelectronics Reliability},
publisher = {Elsevier BV},
volume = {44},
number = {6},
pages = {909--916},
issn = {0026-2714},
doi = {10.1016/j.microrel.2004.02.005},
}
This record lives at https://refs.drheap.org/vollertsen2004voltage/ and will keep doing so.