Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories
The work
| Authors | F. Wrobel; Jean Gasiot; Frédéric Saigné; Antoine D. Touboul |
|---|---|
| Editors | |
| Type | article |
| Year | 2008 |
| Citekey | wrobel2008effects |
Where it appeared
| Published in | Applied Physics Letters |
|---|---|
| Publisher | American Institute of Physics |
| Volume | 93 |
| Issue | 6 |
Identifiers
| DOI | 10.1063/1.2971203 |
|---|---|
| OpenAlex | W2035651626 |
Access
| Landing page | https://doi.org/10.1063/1.2971203 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
We have investigated material susceptibilities to atmospheric neutrons by calculating nuclear cross sections for every natural element from carbon to bismuth. The alpha emitters that can be present in microelectronic devices have also been identified. To improve the performance of microelectronic devices, the semiconductor industry has introduced a number of chemical elements in the device process. These elements experience a natural flux of neutrons and can also contain natural radioactive isotopes. In both cases, device reliability can be compromised. We show that, at ground level, the introduction of an element may be more important than the effect of neutrons.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-26 13:31 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@article{wrobel2008effects,
title = {Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories},
author = {F. Wrobel and Jean Gasiot and Frédéric Saigné and Antoine D. Touboul},
year = {2008},
journal = {Applied Physics Letters},
publisher = {American Institute of Physics},
volume = {93},
number = {6},
doi = {10.1063/1.2971203},
}
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