A 30 Year Retrospective on Dennard's MOSFET Scaling Paper

The work

TitleA 30 Year Retrospective on Dennard's MOSFET Scaling Paper
AuthorsM. Bohr
Typearticle
Year2007
Citekeybohr2007year

Where it appeared

Published inIEEE Solid-State Circuits Society Newsletter
PublisherIEEE
Volume12
Issue1
Pages11--13

Identifiers

DOI10.1109/n-ssc.2007.4785534
OpenAlexW2168732909

Access

Landing pagehttps://doi.org/10.1109/n-ssc.2007.4785534

Abstract

The MOSFET scaling principles for obtaining simultaneous improvements in transistor density, switching speed, and power dissipation described by Robert H. Dennard and others in "Design of Ion-implanted MOSFETs with Very Small Physical Dimensions" (1974 ) became a roadmap for the semiconductor industry to provide systematic and predictable transistor improvements. New technology generations emerging approximately every three years during the 1970's and 1980's and appearing every other year starting in the mid-1990's, promise to continue although we face growing challenges.

Where this came from

How it got herethe agent went looking · found via openalex
First seen2026-08-04
Standingendorsed
Approved2026-08-07
In: From the transistor to the end of scaling topic

Cite it as

@article{bohr2007year,
  title = {A 30 Year Retrospective on Dennard's MOSFET Scaling Paper},
  author = {M. Bohr},
  year = {2007},
  journal = {IEEE Solid-State Circuits Society Newsletter},
  volume = {12},
  number = {1},
  pages = {11--13},
  publisher = {IEEE},
  doi = {10.1109/n-ssc.2007.4785534},
  url = {https://doi.org/10.1109/n-ssc.2007.4785534},
}

This record lives at https://refs.drheap.org/bohr2007year/ and will keep doing so.