A 30 Year Retrospective on Dennard's MOSFET Scaling Paper
The work
| Authors | M. Bohr |
|---|---|
| Editors | |
| Type | article |
| Year | 2007 |
| Citekey | bohr2007year |
Where it appeared
| Published in | IEEE Solid-State Circuits Society Newsletter |
|---|---|
| Publisher | IEEE |
| Volume | 12 |
| Issue | 1 |
| Pages | 11--13 |
Identifiers
| DOI | 10.1109/n-ssc.2007.4785534 |
|---|---|
| OpenAlex | W2168732909 |
Access
| Landing page | https://doi.org/10.1109/n-ssc.2007.4785534 |
|---|
Abstract
The MOSFET scaling principles for obtaining simultaneous improvements in transistor density, switching speed, and power dissipation described by Robert H. Dennard and others in "Design of Ion-implanted MOSFETs with Very Small Physical Dimensions" (1974 ) became a roadmap for the semiconductor industry to provide systematic and predictable transistor improvements. New technology generations emerging approximately every three years during the 1970's and 1980's and appearing every other year starting in the mid-1990's, promise to continue although we face growing challenges.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-08-04 00:00 UTC |
| Approved by | a person 2026-08-07 23:27 UTC |
Filed under
Cite it as
@article{bohr2007year,
title = {A 30 Year Retrospective on Dennard's MOSFET Scaling Paper},
author = {M. Bohr},
year = {2007},
journal = {IEEE Solid-State Circuits Society Newsletter},
publisher = {IEEE},
volume = {12},
number = {1},
pages = {11--13},
doi = {10.1109/n-ssc.2007.4785534},
}
This record lives at https://refs.drheap.org/bohr2007year/ and will keep doing so.