This description was written by a machine and published without a person checking it. It is what the agent made of this grouping, and not a statement anybody has stood behind.
From the transistor to the end of scaling
A subject the papers are about. The loosest grouping, and the one to reach for last.
The transistor, the IC and the scaling rules (Moore, Dennard), the arguments over where scaling stops, and the physical floors it meets. Many members are citations only: a bibliography, not a reading list.
38 references
The future transistors
Wei Cao and others (2023) · Nature
Moore's law: The journey ahead
Mark S. Lundstrom and others (2022) · Science · American Association for the Advancement of Science (AAAS)
Evaluation of Planar MOSFET, FinFET and GAAFET in VLSI
VLSI Simplified (2021) · YouTube · video
The Trend of Different Parameters for Designing Integrated Circuits from 1973 to 2019 and Linked to Moore's Law
N. Alam and others (2020) · Australian Journal of Engineering and Innovative Technology
The future of computing beyond Moore's Law
John Shalf (2020) · Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
The era of hyper-scaling in electronics
Sayeef Salahuddin and others (2018) · Nature Electronics · Springer Science and Business Media LLC
CMOS Scaling Trends and Beyond
M. Bohr and others (2017) · IEEE Micro · Institute of Electrical and Electronics Engineers
A Brief History of the Semiconductor Industry
Paolo A. Gargini (2017) · Nanoelectronics: Materials, Devices, Applications · Wiley-VCH
The End of Moore’s Law: A New Beginning for Information Technology
Thomas N. Theis and others (2017) · Computing in Science & Engineering
Information and thermodynamics: experimental verification of Landauer's Erasure principle
Antoine Bérut and others (2015) · Journal of Statistical Mechanics: Theory and Experiment · IOP Publishing
Experimental verification of Landauer’s principle linking information and thermodynamics
Antoine Bérut and others (2012) · Nature · Nature Portfolio
In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor
Thomas Theis and others (2010) · Proceedings of the IEEE · Institute of Electrical and Electronics Engineers
A 30 Year Retrospective on Dennard's MOSFET Scaling Paper
M. Bohr (2007) · IEEE Solid-State Circuits Society Newsletter · IEEE
Progress in Digital Integrated Electronics [Technical Literature, Copyright 1975 IEEE. Reprinted, with permission. IEDM Tech Digest 1975, pp. 11-13.]
Gordon E. Moore (2006) · IEEE Solid-State Circuits Society Newsletter · Institute of Electrical and Electronics Engineers
Designing Reliable Systems from Unreliable Components: The Challenges of Transistor Variability and Degradation
Shekhar Y. Borkar (2005) · IEEE Micro · Institute of Electrical and Electronics Engineers
Scaling, power, and the future of CMOS
M. Horowitz and others (2005) · IEEE
Impact of CMOS process scaling and SOI on the soft error rates of logic processes
Scott A. Hareland and others (2001) · Symposium on VLSI Technology
Lithography and the future of Moore's law
Gordon E. Moore (1995) · Proceedings of SPIE 2438: Advances in Resist Technology and Processing XII · SPIE
Silicon-Silicon Dioxide Surface Device
Dawon Kahng (1991) · Semiconductor Devices: Pioneering Papers · World Scientific
Dissipation and noise immunity in computation and communication
Rolf Landauer (1988) · Nature · Nature Portfolio
Microelectronics
Robert N. Noyce (1977) · Scientific American · Scientific American
Invention of the integrated circuit
Jack S. Kilby (1976) · IEEE Transactions on Electron Devices · IEEE
Design of ion-implanted MOSFET's with very small physical dimensions
R. H. Dennard and others (1974) · IEEE Journal of Solid-State Circuits · IEEE
Cramming more components onto integrated circuits
Gordon E. Moore (1965) · Electronics
Miniaturized Electronic Circuits
Jack S. Kilby (1964) · United States Patent and Trademark Office
Electric Field Controlled Semiconductor Device
Dawon Kahng (1963) · United States Patent and Trademark Office
Nanowatt logic using field-effect metal-oxide semiconductor triodes
Frank M. Wanlass and others (1963) · 1963 IEEE International Solid-State Circuits Conference: Digest of Technical Papers
Method of Manufacturing Semiconductor Devices
Jean A. Hoerni (1962) · United States Patent and Trademark Office
Planar silicon diodes and transistors
J. A. Hoerni (1961) · IRE Transactions on Electron Devices · Institute of Electrical and Electronics Engineers
Irreversibility and Heat Generation in the Computing Process
Rolf Landauer (1961) · IBM Journal of Research and Development · IBM
Semiconductor Device-and-Lead Structure
Robert N. Noyce (1961) · United States Patent and Trademark Office
Planar silicon diodes and transistors
J. A. Hoerni (1960) · 1960 International Electron Devices Meeting · IEEE
Method of Treating Silicon
Joseph R. Ligenza (1960) · United States Patent and Trademark Office
Fabrication of Semiconductor Devices Having Stable Surface Characteristics
M. M. Atalla and others (1959) · United States Patent and Trademark Office
Stabilization of Silicon Surfaces by Thermally Grown Oxides
M. M. Atalla and others (1959) · Bell System Technical Journal · Institute of Electrical and Electronics Engineers
The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors
W. Shockley (1949) · Bell System Technical Journal · IEEE
The Transistor, A Semi-Conductor Triode
J. Bardeen and others (1948) · Physical Review · American Physical Society
Nature of the Forward Current in Germanium Point Contacts
W. H. Brattain and others (1948) · Physical Review · American Physical Society