Nanowatt logic using field-effect metal-oxide semiconductor triodes
The work
| Authors | Frank M. Wanlass; C. T. Sah |
|---|---|
| Editors | |
| Type | inproceedings |
| Year | 1963 |
| Citekey | wanlass1963nanowatt |
Where it appeared
| Published in | 1963 IEEE International Solid-State Circuits Conference: Digest of Technical Papers |
|---|---|
| Pages | 32--33 |
Identifiers
| DOI | 10.1109/isscc.1963.1157450 |
|---|---|
| OpenAlex | W1581630807 |
Access
| Landing page | https://doi.org/10.1109/isscc.1963.1157450 |
|---|
Related
| Distinct from | bohr2017cmos |
|---|---|
| Distinct from | kahng1963electric |
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
COMPLEMENTARY N AND P-type field-effect metal-oxide-semiconductor-triodes have been fabricated from silicon. By a planar diffusion process.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-08-30 18:34 UTC |
| Approved by | a person 2026-09-01 20:28 UTC |
Filed under
Cite it as
@inproceedings{wanlass1963nanowatt,
title = {Nanowatt logic using field-effect metal-oxide semiconductor triodes},
author = {Frank M. Wanlass and C. T. Sah},
year = {1963},
booktitle = {1963 IEEE International Solid-State Circuits Conference: Digest of Technical Papers},
pages = {32--33},
doi = {10.1109/isscc.1963.1157450},
}
This record lives at https://refs.drheap.org/wanlass1963nanowatt/ and will keep doing so.