Electric Field Controlled Semiconductor Device
The work
| Authors | Dawon Kahng |
|---|---|
| Editors | |
| Type | misc |
| Year | 1963 |
| Citekey | kahng1963electric |
Where it appeared
| Publisher | United States Patent and Trademark Office |
|---|
Identifiers
| report_number | 3,102,230 |
|---|
Settled
| Abstract | The United States Patent and Trademark Office publishes a patent abstract, but no registrar deskr can ask holds one for a 1963 grant; it would have to be transcribed from the document. |
|---|---|
| Container | A patent is not in a container; the issuing office is recorded as the publisher, in the same form as schreiber1995remote. |
Related
| Distinct from | atalla1959stabilization The oxide and the device built on it. Atalla, Tannenbaum and Scheibner establish in 1959 that a thermally grown silicon-silicon dioxide interface gives a stable silicon surface; Kahng's 1963 patent is the field-effect device that stands on exactly that system. The MOSFET's full name in the 1960 conference title request 98 asks for -- 'silicon-silicon dioxide field induced surface devices' -- names this result in its first four words. |
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| Distinct from | wanlass1963nanowatt The device and the logic family built from it, both 1963. Kahng's patent covers the field-effect device; this paper puts complementary pairs of them together to get logic that draws power only when switching. |
A copy is held
pdf, 538.1 kB. Not published — it may be under copyright. The facts and links here are.
How it got here
| How it got here | agent via bibtex |
|---|---|
| Added | 2026-08-30 18:24 UTC |
| Approved by | a person 2026-09-01 20:29 UTC |
Filed under
Cite it as
@misc{kahng1963electric,
title = {Electric Field Controlled Semiconductor Device},
author = {Dawon Kahng},
year = {1963},
publisher = {United States Patent and Trademark Office},
}
This record lives at https://refs.drheap.org/kahng1963electric/ and will keep doing so.