Stabilization of Silicon Surfaces by Thermally Grown Oxides

The work

AuthorsM. M. Atalla; Eileen Tannenbaum; Edwin J. Scheibner
Editors
Typearticle
Year1959
Citekeyatalla1959stabilization

Where it appeared

Published inBell System Technical Journal
PublisherInstitute of Electrical and Electronics Engineers
Volume38
Issue3
Pages749--783

Related

Distinct fromatalla1959fabrication
Distinct fromkahng1963electric

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Abstract

A study has been carried out of the stability of silicon surfaces when they are provided with a chemically bound solid-solid interface. Stable surfaces have been obtained with the system silicon-silicon dioxide when the oxide is thermally grown. This latter system has been studied in some detail. In this paper the following phases of our investigation are presented: (i) some aspects of the thermal oxidation process and properties of the oxide; (ii) the electronic properties of the resulting silicon-silicon dioxide interface; (iii) the application of the process to devices and resulting device characteristics.

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Cite it as

@article{atalla1959stabilization,
  title        = {Stabilization of Silicon Surfaces by Thermally Grown Oxides},
  author       = {M. M. Atalla and Eileen Tannenbaum and Edwin J. Scheibner},
  year         = {1959},
  journal      = {Bell System Technical Journal},
  publisher    = {Institute of Electrical and Electronics Engineers},
  volume       = {38},
  number       = {3},
  pages        = {749--783},
  doi          = {10.1002/j.1538-7305.1959.tb03907.x},
}

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