Design of ion-implanted MOSFET's with very small physical dimensions
The work
| Title | Design of ion-implanted MOSFET's with very small physical dimensions |
|---|---|
| Authors | R. H. Dennard; F. H. Gaensslen; Hwa-Nien Yu; V. L. Rideout; E. Bassous; A. LeBlanc |
| Type | article |
| Year | 1974 |
| Citekey | dennard1974design |
Where it appeared
| Published in | IEEE Journal of Solid-State Circuits |
|---|---|
| Publisher | IEEE |
| Volume | 9 |
| Issue | 5 |
| Pages | 256--268 |
Identifiers
| DOI | 10.1109/jssc.1974.1050511 |
|---|---|
| OpenAlex | W2132729131 |
Access
| Landing page | https://doi.org/10.1109/jssc.1974.1050511 |
|---|
Abstract
This paper considers the design, fabrication, and characterization of very small Mosfet switching devices suitable for digital integrated circuits, using dimensions of the order of 1 /spl mu/. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation, to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 /spl mu/ were fabricated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected.
Where this came from
| How it got here | the agent went looking · found via openalex |
|---|---|
| First seen | 2026-08-05 |
| Standing | endorsed |
| Approved | 2026-08-07 |
Cite it as
@article{dennard1974design,
title = {Design of ion-implanted MOSFET's with very small physical dimensions},
author = {R. H. Dennard and F. H. Gaensslen and Hwa-Nien Yu and V. L. Rideout and E. Bassous and A. LeBlanc},
year = {1974},
journal = {IEEE Journal of Solid-State Circuits},
volume = {9},
number = {5},
pages = {256--268},
publisher = {IEEE},
doi = {10.1109/jssc.1974.1050511},
url = {https://doi.org/10.1109/jssc.1974.1050511},
}
This record lives at https://refs.drheap.org/dennard1974design/ and will keep doing so.