In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

The work

AuthorsThomas Theis; P. M. Solomon
Editors
Typearticle
Year2010
Citekeytheis2010quest

Where it appeared

Published inProceedings of the IEEE
PublisherInstitute of Electrical and Electronics Engineers
Volume98
Issue12
Pages2005--2014

Related

Distinct fromtheis2017moores Theis is first author of both. The 2010 paper surveys the search for a successor switch to the silicon FET; the 2017 paper argues the end of Moore's law is a beginning, and cites the 2010 paper as its own groundwork -- reference 8 of theis2017moores is this work.

Abstract

Reduced power dissipation relative to the field-effect transistor (FET) is a key attribute that should be possessed by any device that has a chance of supplanting the FET as the ubiquitous building block for complex digital logic. We outline the possible physical approaches to achieving this attribute, and illustrate these approaches by citing current exploratory device research. We assess the value of the key exploratory research objectives of the semiconductor industry-sponsored Nanoelectronics Research Initiative (NRI) in the light of this pressing need to reduce dissipation in future digital logic devices.

How it got here

How it got hereagent via openalex
Added2026-08-30 16:54 UTC
Approved bya person 2026-09-01 20:32 UTC

Cite it as

@article{theis2010quest,
  title        = {In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor},
  author       = {Thomas Theis and P. M. Solomon},
  year         = {2010},
  journal      = {Proceedings of the IEEE},
  publisher    = {Institute of Electrical and Electronics Engineers},
  volume       = {98},
  number       = {12},
  pages        = {2005--2014},
  doi          = {10.1109/jproc.2010.2066531},
}

This record lives at https://refs.drheap.org/theis2010quest/ and will keep doing so.