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SEE test and modeling results on 45nm SRAMs with different well strategies
The work
| Authors | Gilles Gasiot; Sławosz Uznański; P. Roche |
|---|---|
| Editors | |
| Type | misc |
| Year | 2010 |
| Citekey | gasiot2010see |
Where it appeared
| Published in | IEEE International Reliability Physics Symposium proceedings |
|---|---|
| Publisher | Institute of Electrical and Electronics Engineers |
| Pages | 407--410 |
Identifiers
| DOI | 10.1109/irps.2010.5488794 |
|---|---|
| OpenAlex | W2018081820 |
Access
| Landing page | https://doi.org/10.1109/irps.2010.5488794 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
This paper presents heavy ion experimental results on SRAMs processed with 45nm bulk technology. Experiments were analyzed for Multiple Cells Upset (MCU) occurrence. The tested device was especially designed for MCU studies. In order to limit their spread it embeds different well strategies: usage of triple well layer and several densities of well ties.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-26 00:32 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@misc{gasiot2010see,
title = {SEE test and modeling results on 45nm SRAMs with different well strategies},
author = {Gilles Gasiot and Sławosz Uznański and P. Roche},
year = {2010},
journal = {IEEE International Reliability Physics Symposium proceedings},
publisher = {Institute of Electrical and Electronics Engineers},
pages = {407--410},
doi = {10.1109/irps.2010.5488794},
}
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