Planar silicon diodes and transistors
The work
| Authors | J. A. Hoerni |
|---|---|
| Editors | |
| Type | article |
| Year | 1961 |
| Citekey | hoerni1961planar |
Where it appeared
| Published in | IRE Transactions on Electron Devices |
|---|---|
| Publisher | Institute of Electrical and Electronics Engineers |
| Volume | 8 |
| Issue | 2 |
| Pages | 178 |
Identifiers
| DOI | 10.1109/t-ed.1961.14755 |
|---|---|
| OpenAlex | W2043445377 |
Access
| Landing page | https://doi.org/10.1109/t-ed.1961.14755 |
|---|
Empty on purpose
| copy |
Related
| Distinct from | hoerni1962method |
|---|---|
| Distinct from | kilby1976invention |
| Distinct from | noyce1961semiconductor |
| Distinct from | noyce1977microelectronics |
| Reprint of | hoerni1960planar |
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
In the planar design of diodes or transistors, the device is fabricated to its final shape during the diffusion operations, rather than during a mesa operation subsequent to diffusion. The planar process involves the application of a suitable coating on the silicon surface prior to the diffusion operations so that the junctions emerge from the bulk of the material under the coating and are protected from environmental contamination. Two types of devices made by the process will be described: a planar diode and a planar NPN transistor. Dopants used in both cases are boron and phosphorus and the lateral limitation of the diffused layers is obtained by oxide masking of suitable shape. The outstanding property of planar units is the very tight distribution of diode reverse currents over a large sample of units. Values of these currents are in close agreement with those calculated from bulk reverse currents. Life test data indicate improved reliability at high temperature storage over mesa units of similar characteristics. Data on unencapsulated units will also be presented.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-09-03 00:37 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Filed under
Cite it as
@article{hoerni1961planar,
title = {Planar silicon diodes and transistors},
author = {J. A. Hoerni},
year = {1961},
journal = {IRE Transactions on Electron Devices},
publisher = {Institute of Electrical and Electronics Engineers},
volume = {8},
number = {2},
pages = {178},
doi = {10.1109/t-ed.1961.14755},
}
This record lives at https://refs.drheap.org/hoerni1961planar/ and will keep doing so.