Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification
The work
| Authors | Md Shafayat Hossain; Saeed Uz Zaman Khan; Md. Obaidul Hossen; Fahim ur Rahman; Rifat Zaman; Quazi D. M. Khosru |
|---|---|
| Editors | |
| Type | misc |
| Year | 2012 |
| Citekey | hossain2012analytical |
Where it appeared
| Published in | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) |
|---|---|
| Volume | 55 |
| Pages | 1--3 |
Identifiers
| DOI | 10.1109/edssc.2012.6482770 |
|---|---|
| OpenAlex | W2548492171 |
Access
| Landing page | https://doi.org/10.1109/edssc.2012.6482770 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
The 3-D poisson's equation with eight boundary conditions is solved analytically and an analytical model of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFET device is developed with quantum correction. Dependence of threshold voltage on channel width, oxide thickness, gate-length, doping and channel material composition are determined from the developed model with experimental and ATLAS verification‥ The model agrees well with experimental and simulation results and offers an insight to the device performance.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-27 17:25 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@misc{hossain2012analytical,
title = {Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification},
author = {Md Shafayat Hossain and Saeed Uz Zaman Khan and Md. Obaidul Hossen and Fahim ur Rahman and Rifat Zaman and Quazi D. M. Khosru},
year = {2012},
journal = {IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)},
volume = {55},
pages = {1--3},
doi = {10.1109/edssc.2012.6482770},
}
This record lives at https://refs.drheap.org/hossain2012analytical/ and will keep doing so.