Quazi D. M. Khosru

4 references under this name, matched as it is written. Somebody else may write under it too, and the same person may appear here spelled another way.

Impact of high‐κgate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate‐all‐around nanowire transistor

Saeed Uz Zaman Khan and others (2015) · International Journal of Numerical Modelling Electronic Networks Devices and Fields · Wiley

Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET

Saeed Uz Zaman Khan and others (2014) · International Conference on Electrical and Computer Engineering (ICECE)

Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification

Md Shafayat Hossain and others (2012) · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs

Fahim ur Rahman and others (2012) · International Conference on Electrical and Computer Engineering (ICECE)