Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs
The work
| Authors | Fahim ur Rahman; Md Shafayat Hossain; Saeed Uz Zaman Khan; Rifat Zaman; Md. Obaidul Hossen; Quazi D. M. Khosru |
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| Editors | |
| Type | misc |
| Year | 2012 |
| Citekey | urrahman2012characterization |
Where it appeared
| Published in | International Conference on Electrical and Computer Engineering (ICECE) |
|---|---|
| Volume | 53 |
| Pages | 674--677 |
Identifiers
| DOI | 10.1109/icece.2012.6471640 |
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| OpenAlex | W2546154290 |
Access
| Landing page | https://doi.org/10.1109/icece.2012.6471640 |
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From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
This paper presents the characterization of interface trap charge for 30 nm In0.53Ga0.47As channel Gate-all-around field effect transistor (GAAFET) using ALD Al203as the oxide. The interface trap charge density (Dit) is extracted from CV model through self consistent iterations. The CV model is formulated by self consistent Schrödinger-Poisson solver. Wave function penetration effect has been considered while solving the Schrodinger equation. The result gives an intuition about the Ditprofile. The difference between the initial assumed CV and the final CV demonstrates the effect of Diton the CV profile of the device. We repeated the same for In.65Ga.35As and In.75Ga.25As and then did a comparative study of the devices. The donor-like traps dominate the Ditprofile for higher mole-fraction of In in InGaAs which in our case is In0.75Ga0.25As. The stronger inversion of In-rich channels and hence, better transport characteristics is evident from these results.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-27 17:23 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@misc{urrahman2012characterization,
title = {Characterization of interface trap density of In-rich InGaAs Gate-all-around nanowire MOSFETs},
author = {Fahim ur Rahman and Md Shafayat Hossain and Saeed Uz Zaman Khan and Rifat Zaman and Md. Obaidul Hossen and Quazi D. M. Khosru},
year = {2012},
journal = {International Conference on Electrical and Computer Engineering (ICECE)},
volume = {53},
pages = {674--677},
doi = {10.1109/icece.2012.6471640},
}
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