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Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET

The work

AuthorsSaeed Uz Zaman Khan; Md Shafayat Hossain; Fahim ur Rahman; Rifat Zaman; Md. Obaidul Hossen; Quazi D. M. Khosru
Editors
Typemisc
Year2014
Citekeykhan2014uncoupled

Where it appeared

Published inInternational Conference on Electrical and Computer Engineering (ICECE)
Volume66
Pages100--103

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Abstract

Since the fabrication of first III–V Gate-All-Around (GAA) MOSFET it is under extensive research, as it is one of the potential candidates to replace the state of art tri-gate FinFETs, to continue progressive scaling. In this work, transport characterization of experimentally demonstrated gate-all-around (GAA) InxGa1−xAs nanowire MOSFET in near-ballistic regime is performed using 3D self-consistent Schrödinger-Poisson solver based on Uncoupled Mode Space approach, taking wave function penetration and other quantum mechanical effects into account. The effects of channel length variation on transport characteristics are also examined.

How it got here

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Added2026-10-27 17:21 UTC
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Cite it as

@misc{khan2014uncoupled,
  title        = {Uncoupled mode space approach towards transport modeling of Gate-All-Around InxGa1−xAs nanowire MOSFET},
  author       = {Saeed Uz Zaman Khan and Md Shafayat Hossain and Fahim ur Rahman and Rifat Zaman and Md. Obaidul Hossen and Quazi D. M. Khosru},
  year         = {2014},
  journal      = {International Conference on Electrical and Computer Engineering (ICECE)},
  volume       = {66},
  pages        = {100--103},
  doi          = {10.1109/icece.2014.7026963},
}

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