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Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3 as Gate Dielectric
The work
| Authors | Md. Obaidul Hossen; Md. Shafayat Hossain; Saeed Uz Zaman Khan; Fahim Ur Rahman; R. Zaman; Q. D. M. Khosru |
|---|---|
| Editors | |
| Type | misc |
| Year | 2012 |
| Also known as | anon2012ballistic |
| Citekey | hossen2012ballistic |
Where it appeared
| Publisher | IEEE |
|---|
Identifiers
| DOI | 10.1109/edssc.2012.6482819 |
|---|
How it got here
| How it got here | agent via unpaywall |
|---|---|
| Added | 2026-10-27 17:25 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@misc{hossen2012ballistic,
title = {Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3 as Gate Dielectric},
author = {Md. Obaidul Hossen and Md. Shafayat Hossain and Saeed Uz Zaman Khan and Fahim Ur Rahman and R. Zaman and Q. D. M. Khosru},
year = {2012},
publisher = {IEEE},
doi = {10.1109/edssc.2012.6482819},
}
This record lives at https://refs.drheap.org/hossen2012ballistic/ and will keep
doing so. It used to be called anon2012ballistic, and those addresses still resolve to this one.