R. Zaman

4 references under this name, matched as it is written. Somebody else may write under it too, and the same person may appear here spelled another way.

Analytical modeling of gate capacitance and drain current of gate-all-around InxGa1−xAs nanowire MOSFET

S. U. Z. Khan and others (2014) · IEEE

Capacitance-Voltage Characteristics of Gate-All-Around InxGa1-XAs Nanowire Transistor

Q. D. M. Khosru and others (2013) · The Electrochemical Society

Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3 as Gate Dielectric

Md. Obaidul Hossen and others (2012) · IEEE

Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect

R. Zaman and others (2012) · IEEE