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Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect

The work

AuthorsR. Zaman; S. U. Z. Khan; M. S. Hossain; F. U. Rahman; M. O. Hossen; Q. D. M. Khosru
Editors
Typemisc
Year2012
Also known asanon2012selfconsistent
Citekeyzaman2012selfconsistent

Where it appeared

PublisherIEEE

How it got here

How it got hereagent via unpaywall
Added2026-10-27 17:23 UTC
Not denied bya person 2026-10-29 17:12 UTC

Cite it as

@misc{zaman2012selfconsistent,
  title        = {Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect},
  author       = {R. Zaman and S. U. Z. Khan and M. S. Hossain and F. U. Rahman and M. O. Hossen and Q. D. M. Khosru},
  year         = {2012},
  publisher    = {IEEE},
  doi          = {10.1109/icece.2012.6471641},
}

This record lives at https://refs.drheap.org/zaman2012selfconsistent/ and will keep doing so. It used to be called anon2012selfconsistent, and those addresses still resolve to this one.