A Compositional Model of MOS Circuits

The work

AuthorsGlynn Winskel
EditorsGraham Birtwistle, P. A. Subrahmanyam
Typeincollection
Year1988
Citekeywinskel1988compositional

Where it appeared

Published inVLSI Specification, Verification and Synthesis
PublisherKluwer Academic Publishers
SeriesThe Kluwer International Series in Engineering and Computer Science
Number in series35
Pages323--347

Related

Distinct frombryant1981switchlevel
Distinct fromcamilleri1986hardware
Distinct fromfugger2016unfaithful
Distinct fromgammie2013synchronous
Distinct frommaier2021composable
Distinct fromwinskel1987models
Distinct fromwinskel1987relating
Distinct fromyan2012oscillator

From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.

Abstract

This paper describes a compositional model for MOS circuits. Following Bryant in [1] it covers some effects of capacitance and resistance used frequently in designs. Bryant’s model has formed the basis of several hardware simulators. From the point of view of verification, however, it suffers the inadequacy that it is not compositional, an expression which will be explained further. This makes it hard to use the model to reason in a structured way.

A copy is held

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How it got here

How it got hereagent via openalex
Added2026-09-15 23:33 UTC
Approved bya person 2026-09-23 14:11 UTC

Cite it as

@incollection{winskel1988compositional,
  title        = {A Compositional Model of MOS Circuits},
  author       = {Glynn Winskel},
  editor       = {Graham Birtwistle, P. A. Subrahmanyam},
  year         = {1988},
  booktitle    = {VLSI Specification, Verification and Synthesis},
  publisher    = {Kluwer Academic Publishers},
  series       = {The Kluwer International Series in Engineering and Computer Science},
  pages        = {323--347},
  doi          = {10.1007/978-1-4613-2007-4_11},
}

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