Watermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips

The work

AuthorsFarah Ferdaus; B. M. S. Bahar Talukder; Md Tauhidur Rahman
Editors
Typeinproceedings
Year2022
Citekeyferdaus2022watermarked

Where it appeared

Published inProceedings of the Great Lakes Symposium on VLSI 2022
Pages21--26

Identifiers

arXiv2204.02104 from its oa_pdf_url
DOI10.1145/3526241.3530341
OpenAlexW4224903564
ISBN978-1-4503-9322-5

Abstract

Electronic counterfeiting is a longstanding problem with adverse long-term effects for many sectors, remaining on the rise. This article presents a novel low-cost technique to embed watermarking in devices with resistive-RAM (ReRAM) by manipulating its analog physical characteristics through switching (set/reset) operation to prevent counterfeiting. We develop a system-level framework to control memory cells' physical properties for imprinting irreversible watermarks into commercial ReRAMs that will be retrieved by sensing the changes in cells' physical properties. Experimental results show that our proposed ReRAM watermarking is robust against temperature variation and acceptably fast with ~0.6bit/min of imprinting and ~15.625bits/s of retrieval rates.

A copy is held

pdf, 1.0 MB. Not published — it may be under copyright. The facts and links here are.

How it got here

How it got hereagent via openalex
Added2026-08-04 00:00 UTC
Approved bya person 2026-08-07 14:39 UTC

Cite it as

@inproceedings{ferdaus2022watermarked,
  title        = {Watermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips},
  author       = {Farah Ferdaus and B. M. S. Bahar Talukder and Md Tauhidur Rahman},
  year         = {2022},
  booktitle    = {Proceedings of the Great Lakes Symposium on VLSI 2022},
  pages        = {21--26},
  isbn         = {978-1-4503-9322-5},
  doi          = {10.1145/3526241.3530341},
}

This record lives at https://refs.drheap.org/ferdaus2022watermarked/ and will keep doing so.