Watermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips
The work
| Authors | Farah Ferdaus; B. M. S. Bahar Talukder; Md Tauhidur Rahman |
|---|---|
| Editors | |
| Type | inproceedings |
| Year | 2022 |
| Citekey | ferdaus2022watermarked |
Where it appeared
| Published in | Proceedings of the Great Lakes Symposium on VLSI 2022 |
|---|---|
| Pages | 21--26 |
Identifiers
| arXiv | 2204.02104 from its oa_pdf_url |
|---|---|
| DOI | 10.1145/3526241.3530341 |
| OpenAlex | W4224903564 |
| ISBN | 978-1-4503-9322-5 |
Access
| Landing page | https://doi.org/10.1145/3526241.3530341 |
|---|---|
| Free full text | https://arxiv.org/pdf/2204.02104 |
Abstract
Electronic counterfeiting is a longstanding problem with adverse long-term effects for many sectors, remaining on the rise. This article presents a novel low-cost technique to embed watermarking in devices with resistive-RAM (ReRAM) by manipulating its analog physical characteristics through switching (set/reset) operation to prevent counterfeiting. We develop a system-level framework to control memory cells' physical properties for imprinting irreversible watermarks into commercial ReRAMs that will be retrieved by sensing the changes in cells' physical properties. Experimental results show that our proposed ReRAM watermarking is robust against temperature variation and acceptably fast with ~0.6bit/min of imprinting and ~15.625bits/s of retrieval rates.
A copy is held
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How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-08-04 00:00 UTC |
| Approved by | a person 2026-08-07 14:39 UTC |
Cite it as
@inproceedings{ferdaus2022watermarked,
title = {Watermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips},
author = {Farah Ferdaus and B. M. S. Bahar Talukder and Md Tauhidur Rahman},
year = {2022},
booktitle = {Proceedings of the Great Lakes Symposium on VLSI 2022},
pages = {21--26},
isbn = {978-1-4503-9322-5},
doi = {10.1145/3526241.3530341},
}
This record lives at https://refs.drheap.org/ferdaus2022watermarked/ and will keep doing so.