Watermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips

The work

TitleWatermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips
AuthorsFarah Ferdaus; B. M. S. Bahar Talukder; Md Tauhidur Rahman
Typeconference paper
Year2022
Citekeyferdaus2022watermarked

Where it appeared

Published inProceedings of the Great Lakes Symposium on VLSI 2022
Pages21--26

Identifiers

DOI10.1145/3526241.3530341
OpenAlexW4224903564
ISBN978-1-4503-9322-5

Access

Landing pagehttps://doi.org/10.1145/3526241.3530341
Free full texthttps://arxiv.org/pdf/2204.02104

Abstract

Electronic counterfeiting is a longstanding problem with adverse long-term effects for many sectors, remaining on the rise. This article presents a novel low-cost technique to embed watermarking in devices with resistive-RAM (ReRAM) by manipulating its analog physical characteristics through switching (set/reset) operation to prevent counterfeiting. We develop a system-level framework to control memory cells' physical properties for imprinting irreversible watermarks into commercial ReRAMs that will be retrieved by sensing the changes in cells' physical properties. Experimental results show that our proposed ReRAM watermarking is robust against temperature variation and acceptably fast with ~0.6bit/min of imprinting and ~15.625bits/s of retrieval rates.

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KindPDF, 1.1 MB
Retrieved2026-08-05
Heldlocal, for personal reference
Where it came fromhttps://arxiv.org/pdf/2204.02104

Where this came from

How it got herethe agent went looking · found via openalex
First seen2026-08-04
Standingendorsed
Approved2026-08-07

Cite it as

@inproceedings{ferdaus2022watermarked,
  title = {Watermarked ReRAM: A Technique to Prevent Counterfeit Memory Chips},
  author = {Farah Ferdaus and B. M. S. Bahar Talukder and Md Tauhidur Rahman},
  year = {2022},
  booktitle = {Proceedings of the Great Lakes Symposium on VLSI 2022},
  pages = {21--26},
  doi = {10.1145/3526241.3530341},
  isbn = {978-1-4503-9322-5},
  url = {https://arxiv.org/pdf/2204.02104},
}

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