Detailed SET Measurement and Characterization of a 65 nm Bulk Technology
The work
| Authors | Maximilien Glorieux; Adrian Evans; Véronique Ferlet-Cavrois; Cesar Boatella-Polo; Dan Alexandrescu; Sylvain Clerc; Gilles Gasiot; P. Roche |
|---|---|
| Editors | |
| Type | article |
| Year | 2017 |
| Also known as | glorieux2016detailed |
| Citekey | glorieux2017detailed |
Where it appeared
| Published in | IEEE Transactions on Nuclear Science |
|---|---|
| Publisher | Institute of Electrical and Electronics Engineers |
| Volume | 64 |
| Issue | 1 |
| Pages | 81--88 |
Identifiers
| DOI | 10.1109/tns.2016.2637935 |
|---|---|
| OpenAlex | W2560787762 |
Access
| Landing page | https://doi.org/10.1109/tns.2016.2637935 |
|---|
From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.
Abstract
Single Event Transients (SETs) are a major concern for space applications, particularly when hardened flip flops are used to reduce the sensitivity of sequential logic. Characterizing SETs is complex as both the cross section and the pulse width must be measured. In the 65 nm test chip presented in this paper, three different SET measurement circuits, implemented on the same die, are characterized and compared. Using these SET detectors, heavy-ion test results are presented. The detectors are compared and a detailed study of the SET sensitivity of multiple gates operating at different logical, load and voltage conditions is presented.
How it got here
| How it got here | agent via openalex |
|---|---|
| Added | 2026-10-26 14:13 UTC |
| Not denied by | a person 2026-10-29 17:12 UTC |
Cite it as
@article{glorieux2017detailed,
title = {Detailed SET Measurement and Characterization of a 65 nm Bulk Technology},
author = {Maximilien Glorieux and Adrian Evans and Véronique Ferlet-Cavrois and Cesar Boatella-Polo and Dan Alexandrescu and Sylvain Clerc and Gilles Gasiot and P. Roche},
year = {2017},
journal = {IEEE Transactions on Nuclear Science},
publisher = {Institute of Electrical and Electronics Engineers},
volume = {64},
number = {1},
pages = {81--88},
doi = {10.1109/tns.2016.2637935},
}
This record lives at https://refs.drheap.org/glorieux2017detailed/ and will keep
doing so. It used to be called glorieux2016detailed, and those addresses still resolve to this one.