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Static low power verification at transistor level for SoC design

The work

AuthorsJérôme Lescot; Vincent Bligny; Dina Medhat; Didier Chollat-Namy; Ziyang Lu; Sophie Billy; Mark Hofmann
Editors
Typemisc
Year2012
Citekeylescot2012static

Where it appeared

Published inACM/IEEE International Symposium on Low Power Electronics and Design (ISLPED)
Pages129--134

Identifiers

DOI10.1145/2333660.2333694
OpenAlexW1986844197

From OpenAlex, which stores abstracts as an index of words and their positions: what is shown is rebuilt from that, and reads fluently whether or not it is what the author wrote.

Abstract

This paper presents a transistor-level verification flow to detect electrical overstress, static leakage and ESD-CDM issues in large low power SoC circuits. With innovative features like Spice patterns recognition and static voltage propagation by Calibre® PERC™, this approach brings significant added value to standard digital checkers that cannot capture some parts of the design in essence, such as analog IPs or third-party IPs designed outside power-intent driven flows. The results obtained on a 32nm CMOS circuit using multiple separate supplies with body biasing strategy, demonstrate the ability of this solution to cope with complex design architectures. As a matter of fact, some severe issues like hundreds of missing level shifters and weak input stages inside isolation cells were detected in few hours.

How it got here

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Added2026-10-24 21:30 UTC
Not denied bya person 2026-10-29 17:12 UTC

Cite it as

@misc{lescot2012static,
  title        = {Static low power verification at transistor level for SoC design},
  author       = {Jérôme Lescot and Vincent Bligny and Dina Medhat and Didier Chollat-Namy and Ziyang Lu and Sophie Billy and Mark Hofmann},
  year         = {2012},
  journal      = {ACM/IEEE International Symposium on Low Power Electronics and Design (ISLPED)},
  pages        = {129--134},
  doi          = {10.1145/2333660.2333694},
}

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