Formal Models of Integrated Circuits for Transistor Level Electrical Verification

The work

AuthorsOussama Oulkaid
Editors
Typephdthesis
Year2025
Citekeyoulkaid2025modeles

Where it appeared

SchoolUniversité Claude Bernard Lyon 1

Related

Containsoulkaid2024transistor
Distinct frombasin1989verification
Distinct frombloem2018formal
Distinct frombryant1981switchlevel
Distinct fromburlyaev2015design
Distinct fromclaessen2009faithful
Distinct fromcousot1977abstract
Distinct fromcousot2003verification
Distinct fromcousot2010gentle
Distinct fromferres2023electrical
Distinct fromferres2025survey
Distinct fromfriedrichs2018metastabilitycontaining
Distinct fromgordon1985formal
Distinct fromherbert1988case
Distinct fromhunt2010use
Distinct fromjoyce1988formal
Distinct fromkumar2023pragmatic
Distinct fromlewis2026finding
Distinct frommermet1997survey
Distinct fromoulkaid2026modeling
Distinct fromreynolds2017solving
Distinct fromurrahman2019advanced
Distinct fromwinskel1987models
Distinct fromwinskel1987relating
Distinct fromyan2012oscillator

Abstract

Chip design is a highly complex task. It involves large teams of engineers with a wide range of skills. Their collective goal is to build chips that conform to their respective specifications, and that are bug-free. Despite the efforts made, it is not uncommon for manufactured chips to contain design errors that went unnoticed. Such scenario is a nightmare for semiconductor companies, for the cost of post-fabrication bug fixing is enormous. Companies hence tend to put even more resources toward test and verification than is spent on other design stages. One can clearly see the importance of early error detection in a circuit design project; the earlier an error is discovered, the less it would cost to fix it. This thesis investigates the problem of error verification in integrated circuits (ICs). The design errors of interest are the so-called electrical errors, which are caused by violations of design rules specific to electrical properties. We study existing circuit verification techniques, to understand their limitations. We then introduce our own approaches and demonstrate their use to detect electrical properties violations in industrial circuits. This is achieved by first defining circuit semantics at transistor level, which can be dealt with as satisfiability modulo theories (SMT) problems. Properties (e.g., absence of an error) are then formalized and checked against the circuit formula using an SMT solver, namely Z3. In addition to detecting electrical errors, we address the problem of the analysis of circuits reliability, and more specifically, that of finding the greatest lower bound for reliability of a circuit and the associated electrical state. In fact, the conditions in which a circuit is used determine its degradation rate. To each circuit state is associated a reliability as a function of age, for a given failure mechanism and related model parameters. Hence, finding the greatest lower bound for reliability boils down to identifying the least reliable circuit state at a given age. Such goal is reached by solving the corresponding optimization modulo theories (OMT) problem. The resulting information gives circuit designers solid guarantees on the lifetime of their circuits. These guarantees must be safe. Yet, the more realistic such information is, the better. The approaches introduced in this work use circuit semantics that are derived from the actual circuit behavior. Different semantics, based on different levels of detail in modeling, are explored, implemented, validated against simulation (which is industry-standard in verifying the properties of interest), and compared with each other. The experimental evaluations conducted provide valuable insights on analysis precision-versus-performance tradeoffs.

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How it got here

How it got hereimport via bibtex
Added2026-08-12 00:00 UTC
Approved bya person 2026-08-16 16:10 UTC

Cite it as

@phdthesis{oulkaid2025modeles,
  title        = {Formal Models of Integrated Circuits for Transistor Level Electrical Verification},
  author       = {Oussama Oulkaid},
  year         = {2025},
  school       = {Université Claude Bernard Lyon 1},
  doi          = {10.70675/04da7988zc71fz4dc8zb42dz662b3868a4cc},
}

This record lives at https://refs.drheap.org/oulkaid2025modeles/ and will keep doing so.